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FFD10UP20S
—
Ultrafast Diode
www.fairchildsemi.com
2
?2008 Fairchild Semiconductor Corporation
FFD10UP20S Rev. C1
Electrical Characteristics TC = 25oC
unless otherwise noted
Symbol
Parameter
Min.
Typ.
Max.
Unit
VF*
Maximum Instantaneous Forward Voltage
IF
= 10 A
IF
= 10 A
TC = 25oC
TC = 100oC
-
-
-
-
1.15
1.10
V
IR*
Maximum Instantaneous Reverse Current
@ rated VR
TC = 25oC
TC = 100oC
-
-
-
-
100
500
?A
trr
Irr
Qrr
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
(IF
= 10 A, di
F/dt = 200 A/?s, VR=130 V)
-
-
-
20.8
2.8
28.5
-
-
-
ns
A
nC
trr
Maximum Reverse Recovery Time
(IF
= 1 A, di
F/dt = 100 A/?s)
-
-
35
ns
WAVL
Avalanche Energy ( L = 40 mH)
10
-
-
mJ
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
** Pulse Test: Pulse Width = 300?s, Duty Cycle = 2%
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相关PDF资料
FFD20UP20S DIODE ULT FAST 200V 20A DPAK-3
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